LPT-7 Diode-Pumped Adag-State Laser Show
Tilmaamaha
| Laysarka Semiconductor | |
| Awoodda Soosaarka CW | ≤ 500mW |
| Polarization | TE |
| Hirarka dhexda | 808 ± 10 nm |
| Qiyaasta heerkulka hawlgalka | 10 ~ 40 °C |
| Wadista Hadda | 0 ~ 500 mA |
| Nd: YVO4Crystal | |
| Nd Isku-darka Doping | 0.1 ~ 3% |
| Cabirka | 3×3×1 mm |
| Fiican | < λ/10 @ 632.8 nm |
| Dahaarka | AR@1064 nm, R<0.1%; 808=”” t=”">90% |
| KTP Crystal | |
| Range dhererka hirarka gudbinta | 0.35 ~ 4.5 µm |
| Iskuxidhka Electro-Optic | r33=36 galabnimo/V |
| Cabirka | 2×2×5 mm |
| Muraayada wax soo saarka | |
| Dhexroorka | Φ 6 mm |
| Radius of Curvature | 50 mm |
| He-Ne alignment laser | ≤ 1 mW @ 632.8 nm |
| Kaarka Daawashada IR | Qiyaasta jawaabta indhaha: 0.7 ~ 1.6 µm |
| muraayadaha Badbaadada Laser | OD= 4+ ee 808 nm iyo 1064 nm |
| Mitirka Koronta indhaha | 2 μW ~ 200mW, 6 miisaan |
LIISKA QAYBAHA
| Maya | Sharaxaada | Halbeegga | Qty |
| 1 | Tareenka indhaha | oo leh saldhigga iyo daboolka boodhka, He-Ne laser koronto ayaa lagu rakibay gudaha saldhigga | 1 |
| 2 | He-Ne Laser Holder | qaade leh | 1 |
| 3 | Toosinta Aperture | f1 mm god leh qaade | 1 |
| 4 | Shaandhayso | f10 mm dalool leh qaade | 1 |
| 5 | Muraayada wax soo saarka | BK7, f6 mm R = 50 mm leh 4- dhidib haye la hagaajin karo iyo qaade | 1 |
| 6 | KTP Crystal | 2×2×5 mm leh 2-dhidib lagu hagaajin karo iyo qaade | 1 |
| 7 | Nd:YVO4 Crystal | 3 × 3 × 1 mm oo leh 2-dhidib la isku hagaajin karo iyo qaade | 1 |
| 8 | 808nm LD (laser diode) | ≤ 500mW oo leh 4-dhidib lagu hagaajin karo iyo qaade | 1 |
| 9 | Haystaha Madaxa | qaade leh | 1 |
| 10 | Kaarka Daawashada Infrared | 750 ~ 1600 nm | 1 |
| 11 | He-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
| 12 | Mitirka Koronta indhaha | 2 μW~200mW (6 qiyaasood) | 1 |
| 13 | Madaxa Baaraha | oo leh dabool iyo boosto | 1 |
| 14 | LD Xakamaynta Hadda | 0 ~ 500 mA | 1 |
| 15 | Xadhkaha Korontada | 3 | |
| 16 | Buugga tilmaamaha | V1.0 | 1 |
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